Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses

• Dapeng Wang and
• Mamoru Furuta

Beilstein J. Nanotechnol. 2018, 9, 2573–2580, doi:10.3762/bjnano.9.239

• visible light irradiation exceeded ≈2.7 eV. Furthermore, the influence of the TIGZO on NBIS-induced instability in a-IGZO TFTs was explored by the combination of current–voltage measurements in double-sweeping VGS mode and capacitance–voltage measurements. The NBIS-induced hysteresis was quantitatively

Effect of ferroelectric BaTiO₃ particles on the threshold voltage of a smectic A liquid crystal

• Abbas R. Imamaliyev,
• Mahammadali A. Ramazanov and
• Shirkhan A. Humbatov

Beilstein J. Nanotechnol. 2018, 9, 824–828, doi:10.3762/bjnano.9.76

• high, the final state is close to homeotropic. As mentioned above, the threshold voltage is determined from the capacitance–voltage measurements of the electro-optical cell initially having planar alignment. The threshold voltage corresponds to the voltage at which the capacitance of the cell or the

Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization

• Vinay Kabra,
• Lubna Aamir and
• M. M. Malik

Beilstein J. Nanotechnol. 2014, 5, 2216–2221, doi:10.3762/bjnano.5.230

• other electronic circuitry. Keywords: capacitance–voltage measurements; current–voltage measurement; solution-processed rectifying p-ZnO/n-Si heterojunction diode; UV illumination; Introduction The fabrication of homo- and hetero-junction diodes based on nanomaterials is an emerging field that could

Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al₂O₃-films

• Jörg Haeberle,
• Karsten Henkel,
• Hassan Gargouri,
• Franziska Naumann,
• Bernd Gruska,
• Michael Arens,
• Massimo Tallarida and
• Dieter Schmeißer

Beilstein J. Nanotechnol. 2013, 4, 732–742, doi:10.3762/bjnano.4.83

• caused by a net negative fixed charge which is built-up in particular in PE-ALD samples as reported in literature [1][18][22][29]. Our capacitance–voltage measurements on these layers (to be reported elsewhere, [23]) indeed yield a negative fixed charge which is in the range of 0.5 to 5 × 1012 cm−2 for